1994. 1. 19
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1415
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH POWER SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
High DC Current Gain : h
FE
=2000(Min.) at V
CE
=3V, I
C
=3A.
Low Saturation Voltage : V
CE(sat)
=1.5V(Max.) at I
C
=3A.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=100V, I
E
=0
-
-
100
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
3.0
mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=50mA, I
B
=0
100
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=3V, I
C
=3A
2000
-
15000
h
FE
(2)
V
CE
=3V, I
C
=7A
1000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
(1)
I
C
=3A, I
B
=6mA
-
0.9
1.5
V
V
CE(sat)
(2)
I
C
=7A, I
B
=14mA
-
1.2
2.0
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=3A, I
B
=6mA
-
1.5
2.5
V
Switching
Time
Turn-on Time
t
on
15
CC
V =45V
DUTY CYCLE 1%
I
B2
B2
I =-I =6mA
B1
B2
I
I
B1
20
S
B1
I
INPUT
OUTPUT
-
0.8
-
S
Storage Time
t
stg
-
3.0
-
Fall Time
t
f
-
2.5
-
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
7
A
Base Current
I
B
0.2
A
Collector Power Dissipation (Tc=25 )
P
C
30
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
5K
BASE
COLLECTOR
EMITTER
150
~
=
~
=
EQUIVALENT CIRCUIT
1994. 1. 19
2/3
KTD1415
Revision No : 0
CE(sat)
COLLECTOR-EMITTER SATURATION
0.3
1
VOLTAGE V (V)
C
0
COLLECTOR CURRENT I (A)
10
CE
8
6
4
1 0
2
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE(sat)
V - I
C
10
3
1
2
0
0.4
CE
I - V
C
0.3
DC CURRENT GAIN h
FE
300
COLLECTOR CURRENT I (A)
1
3
10
30
C
FE
h - I
C
2
4
6
8
12
COMMON EMITTER
Tc=25 C
1.4
1.2
1.0
0.8
0.6
0.4
I =0.2mA
B
0
12
0
COLLECTOR-EMITTER VOLTAGE V (V)
2
1
0
4
6
8
CE
8
6
4
2
10
COLLECTOR CURRENT I (A)
0
C
C
I - V
CE
Tc=100 C
COMMON EMITTER
1.0
0.8
0.6
0.4
0
B
I =0.2mA
12
0
COLLECTOR-EMITTER VOLTAGE V (V)
2
1
0
4
6
8
CE
8
6
4
2
10
COLLECTOR CURRENT I (A)
0
C
C
I - V
CE
COMMON EMITTER
Tc=-50 C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
B
I =0.5mA
0
500
1000
3000
5000
10000
20000
COMMON EMITTER
V =3V
CE
Tc=
100
C
25
-50
C
COLLECTOR CURRENT I (A)
0.5
3
5
C
I /I =500
COMMON EMITTER
B
5
3
0.5
VOLTAGE V (V)
1
BASE-EMITTER SATURATION
BE(sat)
0.4
2
0
1
3
10
C
V - I
BE(sat)
B
COMMON EMITTER
I /I =500
C
COLLECTOR CURRENT I (A)
C
10
Tc=100 C
25
-50
-50
25
Tc=100 C
5
5
1994. 1. 19
3/3
KTD1415
Revision No : 0
th
10
TRANSIENT THERMAL RESISTANCE
100
1
r ( C/W)
C
0
COLLECTOR CURRENT I (A)
BE
1.6
1.2
0
2
.0
0.8
BASE-EMITTER VOLTAGE V (V)
0.4
th
r - t
w
1
0.1
0.01
10
0.001
PULSE WIDTH t (sec)
BE
I - V
C
1
2
3
4
5
6
7
2.4
2.8
3.2
COMMON EMITTER
V =3V
CE
Tc
=100
C
25
-50
w
0.1
100
1000
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
1 INFINITE HEAT SINK
2 NO HEAT SINK
1
2
SAFE OPERATING AREA
5
3
1
0.5
0.3
0.1
0.05
COLLECTOR CURRENT I (A)
0.03
C
3
COLLECTOR-EMITTER VOLTAGE V (V)
10
1
3
0
100
CE
10
I MAX.(PULSED)
C
C
I MAX.
(CONTINUOUS)
DC
OPE
RA
TION
Tc=25
C
10
0
S
1m
S
10mS
100mS
V MAX.
CEO
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
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